S and Te inter-diffusion in CdTe/CdS hetero junction

Effects of post formation thermal annealing of the CdTe–CdS device on the inter-diffusion of S and Te at the junction in a substrate configuration device have been studied by Auger electron spectroscopy. While the migration of S and Te atoms increases with annealing temperature, the extent of S diffusion is always higher than the diffusion of Te atoms. Inter-diffusion of S and Te causes the formation of CdTe 1 - x S x ternary compound at the CdTe–CdS interface.