Properties of fluorine doped ZnO thin films deposited by magnetron sputtering

Fluorine doped ZnO (FZO) films were deposited on Corning glass by radio frequency (rf) magnetron sputtering of pure ZnO target in CF4 containing gas mixtures, and the compositional, electrical, optical, and structural properties of the as-grown films as well as the vacuum-annealed films were investigated. The fluorine content in FZO films increased with increasing CF4 content in sputter gas. FZO films deposited at elevated temperature of 150 °C had considerably lower fluorine content and showed a poorer electrical properties than the films deposited at room temperature. Despite high fluorine contents in the films, for all the FZO films, the carrier concentration remained below 2×1020 cm−3, leading to fairly low doping efficiency level. Vacuum-annealing of the FZO films deposited at room temperature resulted in substantial increase of Hall mobilities, reaching as high as 43 cm2/Vs. This was attributed partly to the removing of oxygen vacancies and/or the forming chemical bonds with interstitial zinc atoms by fluorine interstitials and partly to the passivation effect of excess fluorine atoms by filling in the dangling bonds at the grain boundaries. For all the films with thickness of around 300 nm, the optical transmissions in visible were higher than 80%, and increased with increasing fluorine content up to 85% for the film with highest fluorine content.