Title of article
CIGS solar cell with MBE-grown ZnS buffer layer
Author/Authors
Islam، نويسنده , , M.M. and Ishizuka، نويسنده , , S. Narita-Yamada، نويسنده , , A. and Sakurai، نويسنده , , K. and Niki، نويسنده , , S. and Sakurai، نويسنده , , T. and Akimoto، نويسنده , , K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
3
From page
970
To page
972
Abstract
Cu(In0.52Ga0.48)Se2 solar cell performance with an MBE-grown ZnS buffer layer was studied. It was found that cell performance with the ZnS buffer layer was inferior compared to that with the CdS buffer layer; however, by insertion of a 50 nm CdS layer in addition to the ZnS buffer layer, the device performance was improved and was better than that with the CdS buffer layer. The higher device performance by using the ZnS/CdS double buffer layer may be due to the improved interface properties of the device.
Keywords
Cu(In Ga)Se2 , solar cell , ZnS buffer layer , Double buffer layer , efficiency
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2009
Journal title
Solar Energy Materials and Solar Cells
Record number
1482904
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