Structural study of device quality silicon germanium thin films deposited by pulsed RF plasma CVD

Microstructures in silicon germanium thin films deposited by pulsed rf plasma CVD have been studied with the help of small-angle X-ray scattering (SAXS) and high-resolution transmission electron microscopy (HRTEM). With lowering of the pulse duty cycle the size of the particles incorporated in the films from the plasma decreases. However, the particles become more symmetric in shape and crystalline in nature. At 75% duty cycle the films have the highest photosensitivity. The increase in SAXS scattering at 75% has been explained by the formation of uniform-size nanocrystallites of SiGe. Urbach energy variation with the duty cycle also suggests the formation of nanocrystallites.