B-coefficient in n-type GaAs

Recombination and absorption measurements performed on double heterostructure films grown by metalorganic chemical vapor deposition are used to deduce B , the coefficient of radiative recombination for n-type GaAs with electron concentrations ( n 0 ) from 1.3 × 10 17 to 3.8 × 10 18 cm - 3 . The radiative and non-radiative components of recombination were separated and the effects of photon recycling were taken into account. It is found that B = 3.5 × 10 - 10 cm 3 / s for low n 0 , and that B decreases significantly with increasing n 0 to as low as B = 1.8 × 10 - 10 cm 3 / s for n 0 = 3.8 × 10 18 cm - 3 .