Accuracy of the Frensley inflow boundary condition for Wigner equations in simulating resonant tunneling diodes

In this paper, the accuracy of the Frensley inflow boundary condition of the Wigner equation is analyzed in computing the I–V characteristics of a resonant tunneling diode (RTD). It is found that the Frensley inflow boundary condition for incoming electrons holds only exactly infinite away from the active device region and its accuracy depends on the length of contacts included in the simulation. For this study, the non-equilibrium Green’s function (NEGF) with a Dirichlet to Neumann mapping boundary condition is used for comparison. The I–V characteristics of the RTD are found to agree between self-consistent NEGF and Wigner methods at low bias potentials with sufficiently large GaAs contact lengths. Finally, the relation between the negative differential conductance (NDC) of the RTD and the sizes of contact and buffer in the RTD is investigated using both methods.