Author/Authors :
Olejn??ek، نويسنده , , J. and Kamler، نويسنده , , C.A. and Mirasano، نويسنده , , A. and Martinez-Skinner، نويسنده , , A.L. and Ingersoll، نويسنده , , M.A. and Exstrom، نويسنده , , C.L. and Darveau، نويسنده , , S.A. and Huguenin-Love، نويسنده , , J.L. and Diaz، نويسنده , , M. and Ianno، نويسنده , , N.J. and Soukup، نويسنده , , R.J.، نويسنده ,
Abstract :
A non-vacuum, two-step process has been used to prepare a series of nanocrystalline CuIn1−xGaxSe2 (x=0, 0.25, 0.5, 0.75, 1) materials. An open-air solvothermal preparation in triethylenetetramine solvent was followed by annealing at 500 °C in a nitrogen atmosphere for 20 min. All materials have mixed clustered plate, spherical particle, and nanorod morphologies with the smallest particle diameters ranging between 20 and 40 nm. Raman spectroscopy and X-ray diffraction (XRD) confirm that indium/gallium ratio control is possible over a wide range. The solvothermal reaction step yields a mixture of chalcopyrite and Cu2−xSe. This is converted to pure chalcopyrite product by annealing at 500 °C.
Keywords :
Nanocrystalline , CIGS , Solvothermal , Processing , Chalcopyrites
