Title of article :
Low temperature deposited boron nitride thin films for a robust anti-reflection coating of solar cells
Author/Authors :
Alemu، نويسنده , , Andenet and Freundlich، نويسنده , , Alex and Badi، نويسنده , , Nacer and Boney، نويسنده , , Chris and Bensaoula، نويسنده , , Abdelhak، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Abstract :
Polycrystalline boron nitride thin films deposited at low temperatures (<200 °C) are shown here to be well adapted for anti-reflection coating of solar cells. The analyses of the optical properties reveal a nearly constant index of refraction (∼2.8) and negligible transmission losses over the useful range of the solar spectrum. Boron nitride thin films are found to be well adapted for integration as anti-reflection coating layers in multi-junction terrestrial and space solar cells due to their spectral stability, their robust ceramic nature and a fairly wide bandgap (6.2 eV). Test fabrication of double layer MgF2/BN anti-reflection coating on GaAs and Si demonstrated minimal reflection losses (<5%) over a wide window of the solar irradiance (1.1–3 eV).
Keywords :
boron nitride , Anti-reflection coating , Gallium arsenide , Silicon , Thin film , solar cells
Journal title :
Solar Energy Materials and Solar Cells
Journal title :
Solar Energy Materials and Solar Cells