Author/Authors :
Fan، نويسنده , , Qi Hua and Chen، نويسنده , , Changyong and Liao، نويسنده , , Xianbo and Xiang، نويسنده , , Xianbi and Zhang، نويسنده , , Shibin and Ingler، نويسنده , , W. and Adiga، نويسنده , , Nirupama and Hu، نويسنده , , Zhihua and Cao، نويسنده , , Xinmin and Du، نويسنده , , Wenhui and Deng، نويسنده , , Xunming، نويسنده ,
Abstract :
Amorphous silicon–germanium (a-SiGe) solar cells with graded Ge fraction along the film depth profile are deposited at elevated rate of 4 Å/s in a pressure range of 2–4 Torr. A properly graded GeH4 flow pattern characterized by a low starting ratio of GeH4:H2 is the key towards achieving highly stable a-Si/a-SiGe tandem cells of 12.94% initial and 11.22% stable efficiencies. A fully laminated module with 38×38 mm2 aperture area made from the tandem cell exhibits an initial efficiency of 10.81%, which shows that the high rate deposited a-Si/a-SiGe tandem cells are promising for practical module applications.
Keywords :
amorphous silicon , solar cell , chemical vapor deposition , Silicon–germanium
