Title of article :
π-Conjugated polymer/GaN Schottky solar cells
Author/Authors :
Matsuki، نويسنده , , Nobuyuki and Irokawa، نويسنده , , Yoshihiro and Nakano، نويسنده , , Yoshitaka and Sumiya، نويسنده , , Masatomo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
4
From page :
284
To page :
287
Abstract :
We developed heterojunction-based Schottky solar cells consisting of π-conjugated polymers and n-type GaN. Poly (3,4-ethylendioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) was used as the transparent Schottky contact material and their electrical properties were investigated in comparison with those of a polyaniline (PANI) Schottky contact. The PEDOT:PSS/n-GaN/sapphire (0 0 0 1) sample exhibited high-quality rectifying characteristics with a low reverse leakage current of less than 10−8 A/cm2 at a reverse bias voltage of −3 V. While investigating the photovoltaic performance, it was observed that the open-circuit voltage of the PEDOT:PSS/n-GaN/sapphire (0 0 0 1) sample reached 0.8 V, which was much superior to the photovoltage reported for a conventional metal/GaN Schottky photodetector. We also confirmed that the PEDOT:PSS is as promising a material as PANI for π-conjugated polymer/GaN Schottky solar cells.
Keywords :
?-Conjugated polymer , GaN , Schottky , Heterojunction
Journal title :
Solar Energy Materials and Solar Cells
Serial Year :
2011
Journal title :
Solar Energy Materials and Solar Cells
Record number :
1484999
Link To Document :
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