Title of article
Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes
Author/Authors
Cheetham، نويسنده , , K.J. and Carrington، نويسنده , , P.J. and Cook، نويسنده , , N.B. and Krier، نويسنده , , A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
534
To page
537
Abstract
The liquid phase epitaxial growth of pentanary GaInAsSbP lattice matched onto InAs substrates is reported for use in narrow bandgap thermophotovoltaic cells. The epitaxial layers were characterised and exhibited bright photoluminescence up to room temperature. Prototype thermophotovoltaic cells were fabricated, which were sensitive in the mid-infrared spectral range having cut-off wavelengths in the range 4.0–4.5 μm at room temperature.
Keywords
LPE , Photoluminescence , Thermophotovoltaic , Pentanary
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2011
Journal title
Solar Energy Materials and Solar Cells
Record number
1485127
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