Author/Authors :
Ihn، نويسنده , , Soo-Ghang and Shin، نويسنده , , Kyung-Sik and Jin، نويسنده , , Mi-Jin and Bulliard، نويسنده , , Xavier and Yun، نويسنده , , Sungyoung and Suk Choi، نويسنده , , Yeong and Kim، نويسنده , , Yungi and Park، نويسنده , , Jong-Hwan and Sim، نويسنده , , Myungsun and Kim، نويسنده , , Min and Cho، نويسنده , , Kilwon and Sang Kim، نويسنده , , Tae and Choi، نويسنده , , Dukhyun and Choi، نويسنده , , Jae-Young and Choi، نويسنده , , Woong and Kim، نويسنده , , Sang-Woo، نويسنده ,
Abstract :
A gallium-doped ZnO (GZO) layer was investigated and compared with a conventional indium-tin-oxide (ITO) layer for use as a cathode in an inverted polymer solar cell based on poly(3-hexylthiophene) (P3HT):[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) bulk heterojunctions (BHJ). By modifying the GZO cathode with a ZnO thin layer, a high power conversion efficiency (3.4%) comparable to that of an inverted solar cell employing the same P3HT:PCBM BHJ photoactive layer with a conventional ITO/ZnO cathode was achieved. This result indicates that GZO is a transparent electrode material that can potentially be used to replace high-cost ITO.
Keywords :
Inverted polymer solar cell , Ga-doped ZnO , transparent conducting oxide , ITO-free , Power conversion efficiency
