Title of article :
Results of a gallium phosphide photovoltaic junction with an AR coating under concentration of natural sunlight
Author/Authors :
Allen، نويسنده , , C.R. and Woodall، نويسنده , , J.M. and Jeon، نويسنده , , J.-H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Abstract :
A gallium phosphide (GaP) photovoltaic junction is grown by molecular beam epitaxy (MBE) on a GaP substrate. An anti-reflection coating of polymethyl methacrylate (PMMA) is applied and the cell is measured under concentrations of 1× and 10.7× in an outdoor setting. Efficiencies up to 2.6% and open circuit voltages up to 1.57 V are reported.
Keywords :
ANTI-REFLECTION , gallium phosphide , CPV , PMMA
Journal title :
Solar Energy Materials and Solar Cells
Journal title :
Solar Energy Materials and Solar Cells
