Title of article :
Electronic property analysis of O-doped Cu3SbS3
Author/Authors :
Tablero، نويسنده , , C.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
5
From page :
180
To page :
184
Abstract :
The ternary Cu–Sb–S semiconductors are considered to be sustainable and potential alternative absorber materials in thin film photovoltaic applications. In these compounds, several phases may coexist, albeit in different proportions depending on experimental growth conditions. Additionally, the photovoltaic efficiency could be increased with isoelectronic doping. In this work we analyze the electronic properties of O-doped Cu3SbS3 in two structures: the wittichenite and the skinnerite. We use first-principles within the density functional formalism with two different exchange–correlation potentials. In addition, we estimate the potential of these compounds for photovoltaic applications.
Keywords :
Ionization levels , Electronic structure , Impurities , Semiconductors , Photovoltaics
Journal title :
Solar Energy Materials and Solar Cells
Serial Year :
2012
Journal title :
Solar Energy Materials and Solar Cells
Record number :
1486687
Link To Document :
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