Author/Authors :
Verlinden، نويسنده , , Pierre J. and Aleman، نويسنده , , Monica and Posthuma، نويسنده , , Niels and Fernandez، نويسنده , , Jara and Pawlak، نويسنده , , Bartek and Robbelein، نويسنده , , Jo and Debucquoy، نويسنده , , Maarteen and Van Wichelen، نويسنده , , Koen and Poortmans، نويسنده , , Jef، نويسنده ,
Abstract :
A simple analytical method is presented to perform a power-loss analysis of high-efficiency silicon Interdigitated Back Contact (IBC) solar cells. The method assumes one-dimensional current flows for both minority and majority carriers, as well as a constant gradient (or linear profile) of minority carrier concentration from the front to the back of the solar cell. The power-loss analysis method is applied to a real IBC silicon solar cell with a conversion efficiency of 23.3%.
Keywords :
One-dimensional model , high-efficiency , Silicon , IBC , Power-loss , analysis
