• Title of article

    Creep deformation of single crystals of binary and some ternary MoSi2 with the C11b structure

  • Author/Authors

    Inui، نويسنده , , H and Ishikawa، نويسنده , , K and Yamaguchi، نويسنده , , M، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    10
  • From page
    1159
  • To page
    1168
  • Abstract
    The creep deformation behavior of binary and some ternary MoSi2 single crystals with the soft [0 15 1] and hard [001] orientations has been investigated in the temperature range from 1200 to 1400°C in compression. The alloying elements studied include Nb and Al that form a C40 disilicide with Si and W and Re that form a C11b disilicide with Si. The creep strain rate for the [001] orientation is significantly (2 orders of magnitude) lower than that for the soft [0 15 1] orientation. The creep strain rate for the [0 15 1] orientation is improved by an order magnitude upon alloying with Re and Nb while alloying with W and Al causes a decline in the creep properties of this orientation. The creep strain rate for the [001] orientation is further improved upon alloying with Re, Nb, W and Al with the extent of improvement significantly larger for the Re addition.
  • Keywords
    D. Defects: dislocation geometry and arrangement , A. Molybdenum silicides , C. Single-crystal growth , B. Creep , B. Microalloying
  • Journal title
    Intermetallics
  • Serial Year
    2000
  • Journal title
    Intermetallics
  • Record number

    1500581