Title of article
Creep deformation of single crystals of binary and some ternary MoSi2 with the C11b structure
Author/Authors
Inui، نويسنده , , H and Ishikawa، نويسنده , , K and Yamaguchi، نويسنده , , M، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
10
From page
1159
To page
1168
Abstract
The creep deformation behavior of binary and some ternary MoSi2 single crystals with the soft [0 15 1] and hard [001] orientations has been investigated in the temperature range from 1200 to 1400°C in compression. The alloying elements studied include Nb and Al that form a C40 disilicide with Si and W and Re that form a C11b disilicide with Si. The creep strain rate for the [001] orientation is significantly (2 orders of magnitude) lower than that for the soft [0 15 1] orientation. The creep strain rate for the [0 15 1] orientation is improved by an order magnitude upon alloying with Re and Nb while alloying with W and Al causes a decline in the creep properties of this orientation. The creep strain rate for the [001] orientation is further improved upon alloying with Re, Nb, W and Al with the extent of improvement significantly larger for the Re addition.
Keywords
D. Defects: dislocation geometry and arrangement , A. Molybdenum silicides , C. Single-crystal growth , B. Creep , B. Microalloying
Journal title
Intermetallics
Serial Year
2000
Journal title
Intermetallics
Record number
1500581
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