Title of article
Creep of single crystalline and polycrystalline T2 phase in the Mo–Si–B system
Author/Authors
Hayashi، نويسنده , , T. and Ito، نويسنده , , K. and Ihara، نويسنده , , K. and Fujikura، نويسنده , , M. and Yamaguchi، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
6
From page
699
To page
704
Abstract
The T2 phase in the Mo–Si–B system has great potential for ultra-high temperature structural applications. We examined creep of the single crystalline and polycrystalline T2 phase. The steady-state creep rate of the [021] oriented specimens is as low as 3.1×10−8 s−1 at 1500 °C and 432 MPa. The minimum creep rates at 1500 °C of the [001] oriented and polycrystalline specimens are 6.9×10−8 s−1 at 600 MPa and 3.0×10−8 s−1 at 300 MPa, respectively. The activation energy for creep was found to be ∼740 and ∼400 kJ mol−1 for [021] and [001] oriented specimens, respectively. Stress exponent for creep was found to be 6.8, 4.3 and 4.6 for [021] and [001] oriented and polycrystalline specimens, respectively. Creep resistance of the single crystalline and polycrystalline T2 specimens is much better than that of MoSi2 and Si3N4 base structural ceramics.
Keywords
A. Ternary alloy systems , D. Defects: dislocation geometry and arrangement (including superdislocations) , A. Molybdenum silicides , B. Creep (properties and mechanisms)
Journal title
Intermetallics
Serial Year
2004
Journal title
Intermetallics
Record number
1502113
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