• Title of article

    Creep of single crystalline and polycrystalline T2 phase in the Mo–Si–B system

  • Author/Authors

    Hayashi، نويسنده , , T. and Ito، نويسنده , , K. and Ihara، نويسنده , , K. and Fujikura، نويسنده , , M. and Yamaguchi، نويسنده , , M.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    6
  • From page
    699
  • To page
    704
  • Abstract
    The T2 phase in the Mo–Si–B system has great potential for ultra-high temperature structural applications. We examined creep of the single crystalline and polycrystalline T2 phase. The steady-state creep rate of the [021] oriented specimens is as low as 3.1×10−8 s−1 at 1500 °C and 432 MPa. The minimum creep rates at 1500 °C of the [001] oriented and polycrystalline specimens are 6.9×10−8 s−1 at 600 MPa and 3.0×10−8 s−1 at 300 MPa, respectively. The activation energy for creep was found to be ∼740 and ∼400 kJ mol−1 for [021] and [001] oriented specimens, respectively. Stress exponent for creep was found to be 6.8, 4.3 and 4.6 for [021] and [001] oriented and polycrystalline specimens, respectively. Creep resistance of the single crystalline and polycrystalline T2 specimens is much better than that of MoSi2 and Si3N4 base structural ceramics.
  • Keywords
    A. Ternary alloy systems , D. Defects: dislocation geometry and arrangement (including superdislocations) , A. Molybdenum silicides , B. Creep (properties and mechanisms)
  • Journal title
    Intermetallics
  • Serial Year
    2004
  • Journal title
    Intermetallics
  • Record number

    1502113