Title of article
Enhanced thermoelectric performance of Ga-added Bi0.5Sb1.5Te3 films by flash evaporation
Author/Authors
Zhao، نويسنده , , Degang and Zuo، نويسنده , , Min and Geng، نويسنده , , Haoran، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
4
From page
321
To page
324
Abstract
The p-type Ga-added Bi0.5Sb1.5Te3 thermoelectric thin film was deposited on glass substrates by flash evaporation. All elements distributed homogeneously in the matrix and nano- GaSb phase, which was about 20 nm, was found in the TEM image. Due to the addition of Ga, the flash evaporated Ga0.02Bi0.5Sb1.5Te3 film showed higher Seebeck coefficient and the maximal Seebeck coefficient reached 216 μV/K at 400 K. The power factor of Ga0.02Bi0.5Sb1.5Te3 film reached 22 μW cm−1K−2 at room temperature, which was higher than that of Bi0.5Sb1.5Te3 thin film.
Keywords
C. Thin films , G. Thermoelectric power generation , B. Thermoelectric properties
Journal title
Intermetallics
Serial Year
2012
Journal title
Intermetallics
Record number
1505498
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