Application of the homotopy analysis method to the Poisson–Boltzmann equation for semiconductor devices

This paper describes the application of a recently developed analytic approach known as the homotopy analysis method to derive an approximate solution to the nonlinear Poisson–Boltzmann equation for semiconductor devices. Specifically, this paper presents an analytic solution to potential distribution in a DG-MOSFET (Double Gate-Metal Oxide Semiconductor Field Effect Transistor). The DG-MOSFET represents one of the most advanced device structures in semiconductor technology and is a primary focus of modeling efforts in the semiconductor industry.