Title of article :
Characterization of partially dissipated solitons in a traveling-wave field-effect transistor
Author/Authors :
Narahara، نويسنده , , Koichi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2014
Pages :
13
From page :
494
To page :
506
Abstract :
We investigate the Korteweg–de Vries equation with nonlinear dissipation, which becomes finite only for small field intensities. Using the perturbation theory based on the inverse scattering transform, we evaluate the amplitude and the phase of both one- and two-soliton solutions to show that large solitons can travel without significant amplitude decay over a long distance. We then develop a traveling-wave field-effect transistor (TWFET) that supports such partially dissipated solitons. Using both the numerical and experimental characterization of a TWFET, we validate the properties of partially dissipated solitons.
Keywords :
Solitons , Inverse scattering transform , Field-effect transistors , Reductive perturbation method
Journal title :
Communications in Nonlinear Science and Numerical Simulation
Serial Year :
2014
Journal title :
Communications in Nonlinear Science and Numerical Simulation
Record number :
1538283
Link To Document :
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