Title of article
2d numerical simulations of an electron–phonon hydrodynamical model based on the maximum entropy principle
Author/Authors
Romano، نويسنده , , Vittorio and Rusakov، نويسنده , , Alexander، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
11
From page
2741
To page
2751
Abstract
2d numerical solutions of a new macroscopic model describing the electron transport in semiconductors coupled with the heating of the crystal lattice are presented. The model has been obtained with the use of the maximum entropy principle. Numerical simulations of a nanoscale MOSFET are presented and the influence of self heating on the electrical characteristics is analyzed.
Keywords
Semiconductors , Energy-transport models , Maximum entropy principle
Journal title
Computer Methods in Applied Mechanics and Engineering
Serial Year
2010
Journal title
Computer Methods in Applied Mechanics and Engineering
Record number
1597918
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