Author/Authors :
Okino، نويسنده , , Fujio and Kawaguchi، نويسنده , , Yukio and Touhara، نويسنده , , Hidekazu and Momota، نويسنده , , Kunitake and Nishitani-Gamo، نويسنده , , Mikka and Ando، نويسنده , , Toshihiro and Sasaki، نويسنده , , Atsushi and Yoshimoto، نويسنده , , Mamoru and Odawara، نويسنده , , Osamu، نويسنده ,
Abstract :
Boron-doped semiconducting diamond films were prepared using BF3 by microwave plasma assisted chemical vapor deposition. B-doping was confirmed by SIMS and Raman spectroscopic measurements and the B-doping levels were estimated. Electrochemical behaviors of boron-doped diamond thin-film electrodes prepared using B2H6 and BF3 were studied by measuring cyclic voltammograms for anodic oxidation of 1,4-difluorobenzene in the liquid electrolyte, neat Et4NF·4HF. The results of the direct thermal interaction of elemental fluorine with hydrogenated and oxidized diamond surfaces are also presented.
Keywords :
fluorination , Boron-doping , Cyclic voltammetry , SIMS , BF3 , Raman spectroscopy , diamond
