Title of article
Preparation of boron-doped semiconducting diamond films using BF3 and the electrochemical behavior of the semiconducting diamond electrodes
Author/Authors
Okino، نويسنده , , Fujio and Kawaguchi، نويسنده , , Yukio and Touhara، نويسنده , , Hidekazu and Momota، نويسنده , , Kunitake and Nishitani-Gamo، نويسنده , , Mikka and Ando، نويسنده , , Toshihiro and Sasaki، نويسنده , , Atsushi and Yoshimoto، نويسنده , , Mamoru and Odawara، نويسنده , , Osamu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
8
From page
1715
To page
1722
Abstract
Boron-doped semiconducting diamond films were prepared using BF3 by microwave plasma assisted chemical vapor deposition. B-doping was confirmed by SIMS and Raman spectroscopic measurements and the B-doping levels were estimated. Electrochemical behaviors of boron-doped diamond thin-film electrodes prepared using B2H6 and BF3 were studied by measuring cyclic voltammograms for anodic oxidation of 1,4-difluorobenzene in the liquid electrolyte, neat Et4NF·4HF. The results of the direct thermal interaction of elemental fluorine with hydrogenated and oxidized diamond surfaces are also presented.
Keywords
fluorination , Boron-doping , Cyclic voltammetry , SIMS , BF3 , Raman spectroscopy , diamond
Journal title
Journal of Fluorine Chemistry
Serial Year
2004
Journal title
Journal of Fluorine Chemistry
Record number
1608576
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