In2S3 sensitized solar cells with a new passivation layer

In2S3 as a semiconductor sensitizer has the advantage of non-toxicity, good stability and high carrier mobility. In this paper, In2S3 sensitized solar cells were firstly prepared by a low cost chemical bath deposition methodology and then fully characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The ZnS passivation layer modified the In2S3 sensitized TiO2 photoanodes and resulted into enhanced Jsc and FF but a lowered Voc compared with the original solar cell under AM1.5, 1 sun. More importantly, we have enhanced all FF, Jsc and Voc when amorphous Y2O3 was used to passivate the In2S3 sensitized solar cells, achieving the highest FF of 65% among the reported similar solar cells.