The electrical resistance of the tantalum–hydrogen system at low temperatures

The data on electroresistance of samples TaHx (x=0.0016,0.0071,0.04) in the interval 5–100 K, that is in two-phase area, are given. The residual resistance is caused mainly by electrons scattering on the hydride precipitates. With increase of temperature the excess resistance, caused by hydrogen, depends on temperature non-monotonously, passing through a maximum in region 50 K. A minimum near 90 K is observed, connected with growth of resistance due to formation of a homogeneous solid solution of hydrogen.