Tellurium electrodeposition like a precursor to prepare the p-CdTe semiconductor

In this work, some aspects about the electrochemical behavior of tellurium, which is a precursor in the preparation of the p-CdTe semiconductor, are presented. Cadmium telluride has been used in the photoelectrochemical generation of hydrogen and such semiconductor material can be obtained by electrochemistry. By using the rotating disk electrode technique the kinetics of the tellurium deposition process on solid tellurium electrodes was analyzed and the kinetic parameters are presented. Electrochemical techniques in nonstationary diffusional regime were used and, in order to investigate the probable existence of adsorbed electroactive species on the electrode surface, the pulsed current electrolysis technique in a controlled hydrodynamic regime was applied.