Title of article :
Temperature dependence of the electronic factor in the nonadiabatic electron transfer at metal and semiconductor electrodes
Author/Authors :
Gosavi، نويسنده , , Shachi and Qin Gao، نويسنده , , Yi and Marcus، نويسنده , , R.A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
The temperature dependence of the electronic contribution to the nonadiabatic electron transfer rate constant (kET) at metal electrodes is discussed. It is found in these calculations that this contribution is proportional to the absolute temperature T. A simple interpretation is given. We also consider the nonadiabatic rate constant for electron transfer at a semiconductor electrode. Under conditions for the maximum rate constant, the electronic contribution is also estimated to be proportional to T, but for different reasons than in the case of metals (Boltzmann statistics and transfer at the conduction band edge for the semiconductor versus Fermi–Dirac statistics and transfer at the Fermi level, which is far from the band edge, of the metal).
Keywords :
Temperature dependence of electronic coupling matrix element , Heterogeneous electron transfer rate constant , Metal electrode , Semiconductor electrode
Journal title :
Journal of Electroanalytical Chemistry
Journal title :
Journal of Electroanalytical Chemistry