• Title of article

    Temperature dependence of the electronic factor in the nonadiabatic electron transfer at metal and semiconductor electrodes

  • Author/Authors

    Gosavi، نويسنده , , Shachi and Qin Gao، نويسنده , , Yi and Marcus، نويسنده , , R.A.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    7
  • From page
    71
  • To page
    77
  • Abstract
    The temperature dependence of the electronic contribution to the nonadiabatic electron transfer rate constant (kET) at metal electrodes is discussed. It is found in these calculations that this contribution is proportional to the absolute temperature T. A simple interpretation is given. We also consider the nonadiabatic rate constant for electron transfer at a semiconductor electrode. Under conditions for the maximum rate constant, the electronic contribution is also estimated to be proportional to T, but for different reasons than in the case of metals (Boltzmann statistics and transfer at the conduction band edge for the semiconductor versus Fermi–Dirac statistics and transfer at the Fermi level, which is far from the band edge, of the metal).
  • Keywords
    Temperature dependence of electronic coupling matrix element , Heterogeneous electron transfer rate constant , Metal electrode , Semiconductor electrode
  • Journal title
    Journal of Electroanalytical Chemistry
  • Serial Year
    2001
  • Journal title
    Journal of Electroanalytical Chemistry
  • Record number

    1664077