Title of article :
Hall effect measurements on CdTe layers electrodeposited from acidic aqueous electrolyte
Author/Authors :
Miyake، نويسنده , , Masao and Murase، نويسنده , , Kuniaki and Hirato، نويسنده , , Tetsuji and Awakura، نويسنده , , Yasuhiro، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
7
From page :
247
To page :
253
Abstract :
The electrical properties of CdTe layers electrodeposited from an acidic sulfate aqueous electrolyte were examined by resistivity and Hall effect measurements. It was revealed that the resistivity, conduction type, and carrier density of the as-deposited CdTe layers could be controlled by the deposition potential. The resistivity varied in the range from 2 × 106 to 2 × 108 Ω cm. The CdTe layers deposited at potentials slightly positive to the Cd2+/Cd equilibrium potential (−0.37 V vs. SHE⩽E⩽−0.30 V) had n-type conductions, while those deposited at more positive potentials (−0.15 V ⩽E⩽−0.05 V) were p-type. The carrier densities of the CdTe layers were on the order of 1010–1011 cm−3. As the deposition potential became more positive, the electron density decreased, and conversely, the hole density increased. The electron mobilities for the n-type CdTe layers were in the range 7–40 cm2 V−1 s−1, while the hole mobility was about 1 cm2 V−1 s−1.
Keywords :
Hall effect , resistivity , Cadmium telluride , solar cells , Thin layer
Journal title :
Journal of Electroanalytical Chemistry
Serial Year :
2004
Journal title :
Journal of Electroanalytical Chemistry
Record number :
1669814
Link To Document :
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