Title of article :
Second harmonic generation at the GaAs(1 1 1)-B|solution interface
Author/Authors :
Lazarescu، نويسنده , , V. and Lazarescu، نويسنده , , M.F. and Jones، نويسنده , , H. and Schmickler، نويسنده , , W.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
257
To page :
261
Abstract :
Second harmonic generation from the interface between GaAs(1 1 1)-B and an aqueous electrolyte has been investigated at a long wavelength (1064 nm) and at two shorter ones (865 and 815 nm). The signal showed the symmetry of the crystal; the isotropic amplitude was found to vary substantially with the electrode potential, indicating that a major part of the signal is generated near the interface. The potential dependence was stronger at shorter wavelengths. Impedance spectroscopy revealed the existence of surface states, which may affect the magnitude of the signal.
Keywords :
second harmonic generation , Impedence spectroscopy , Surface states , Gallium arsenide
Journal title :
Journal of Electroanalytical Chemistry
Serial Year :
2004
Journal title :
Journal of Electroanalytical Chemistry
Record number :
1670352
Link To Document :
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