• Title of article

    Hydrogen adsorption on and diffusion through MoS2 monolayer: First-principles study

  • Author/Authors

    Keong Koh، نويسنده , , Eugene Wai and Chiu، نويسنده , , Cheng Hsin and Lim، نويسنده , , Yao Kun and Zhang، نويسنده , , Yong-Wei and Pan، نويسنده , , Hui، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2012
  • Pages
    6
  • From page
    14323
  • To page
    14328
  • Abstract
    We investigate the hydrogen adsorption on and diffusion through the MoS2 monolayer based on density-functional theory. We show that the hydrogen atom prefers to bond to the S atom at the monolayer, leading to enhanced conductivity. The hydrogen atom can also adsorb at the middle of the hexagon ring by overcoming an energy barrier of 0.57 eV at a strain of 8%. Also, we show that the MoS2 monolayer is flexible and any mechanical deformation of the monolayer is reversible because the extension of the Mo–S bond is much smaller than the applied strain. The monolayer can block the diffusion of hydrogen molecule from one side to the other due to a high energy barrier (6.56 eV). However, the barrier can be reduced to 1.38 eV at a strain of 30% and even totally removed by creating S vacancies and applying a strain of 15%. The MoS2 monolayer may find applications in sensors to detect hydrogen, and as mechanical valve to control the concentration of hydrogen gas.
  • Keywords
    MoS2 monolayer , Hydrogen adsorption and diffusion , strain , First-Principles Calculations
  • Journal title
    International Journal of Hydrogen Energy
  • Serial Year
    2012
  • Journal title
    International Journal of Hydrogen Energy
  • Record number

    1673180