Electron-stimulated oxidation of silicon carbide

Auger Electron spectroscopy was used to study electron-stimulated oxidation (ESO) of SiC. The rate of oxidation was investigated as a function of electron-beam exposure (on and off), primary electron-beam energy (3–6 keV), electron-beam current (25–500 nA) and total chamber pressure. The oxidation rate correlated with overall chamber pressure rather than the partial pressure of H2O, CO or CO2 alone. The rate decreased as the primary-beam voltage Ep was increased. The oxidation rate increased as the primary-beam current was increased at higher pressures (2.2×10−7 Torr). Oxidation did not occur in the absence of the electron beam.