Dynamical behavior of tertiarybutylarsine at GaAs(001)

The dynamical behavior of tertiarybutylarsine (TBAs), which has a heavy mass of 134 and is an important precursor in the crystal growth of III–V compounds, was studied on a GaAs(001)-c(4×4) surface using a supersonic molecular beam. Direct scattering and trapping/desorption channels of incident TBAs were assigned based on a detailed analysis of incident energy and angle dependence of the scattered molecule. A large energy exchange from translational to rotational modes was observed for directly scattered TBAs. A trajectory simulation was conducted to quantitatively explain the angle dependence of scattered TBAs, energy exchange at collision, and the energy dependence of trapping probability on the surface.