Title of article
Epitaxial growth of ultrathin Ag films on Al(111)
Author/Authors
Losch، نويسنده , , Andreas and Niehus، نويسنده , , Horst، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2000
Pages
8
From page
153
To page
160
Abstract
The structure and growth mode of Ag evaporated on Al(111) at room temperature were investigated by ion scattering. Within the limits of our experimental resolution (0.2 إ), the positions of the adsorbed Ag atoms were found to coincide laterally and vertically with the positions of the extended Al bulk lattice. The fcc stacking layer sequence of the substrate is kept by the adsorbing Ag at least up to the second layer. Strong indications for island formation (three-dimensional growth mode) have been found.
Keywords
Thin film , AG , epitaxial growth , ion scattering , Al(111) , Surface Analysis
Journal title
Surface Science
Serial Year
2000
Journal title
Surface Science
Record number
1677707
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