Investigation of surface and bulk electronic structure of Ge(1 1 1) by low-energy electron backscattering technique

Electron excitation of surface electronic transitions and bulk interband transitions for Ge(1 1 1)-c(2×8) are studied by low-energy (0–3 eV) electron backscattering technique using a hypocycloidal electron spectrometer with high-energy resolution of the analyser (∼50 meV). The obtained results are in rather good agreement with the experimental data of other authors and with theoretical calculations of germanium structure performed by orthogonalized plane wave method. Additional data on the energy distribution of surface electronic states on the Ge(1 1 1)-c(2×8) surface are obtained.