Title of article :
Photoelectron diffraction study of the Si 2p surface-core-level-shift of the Si(0 0 1)(1×2)-Sb surface
Author/Authors :
Shimomura، نويسنده , , M and Abukawa، نويسنده , , T and Yoshimura، نويسنده , , K and Oh، نويسنده , , J.H and Yeom، نويسنده , , H.W and Kono، نويسنده , , S، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Pages :
6
From page :
23
To page :
28
Abstract :
Structural parameters of the Si(0 0 1)(1×2)-Sb surface were optimized by photoelectron diffraction (PED) of Sb 4d peaks. The optimized parameters are 3.17±0.1 إ for Sb-dimer bond length and 1.78±0.1 إ for the layer spacing between Sb and the first layer Si. The main origin of a surface-core-level-shifted (SCLS) component in Si 2p core-level spectra is identified by SCLS-PED to be the first layer Si atoms connected to Sb dimers. Another SCLS component reported previously was not observed, which indicates that this SCLS component is related to some defects on the (1×2)-Sb surface.
Keywords :
and topography , Surface relaxation and reconstruction , Silicon , Photoelectron diffraction , surface structure , Roughness , morphology , Antimony
Journal title :
Surface Science
Serial Year :
2001
Journal title :
Surface Science
Record number :
1678116
Link To Document :
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