Title of article
Thermal desorption in the lattice gas model – H adsorbed on Si(1 0 0)
Author/Authors
Yagi، نويسنده , , Y. and Kaji، نويسنده , , H. and Kakitani، نويسنده , , K. and Yoshimori، نويسنده , , A.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
5
From page
126
To page
130
Abstract
Thermal desorption rate in the lattice gas model has a diverging enhancement near saturation coverage, which is sometimes overlooked. It exists even for interacting adsorbates in the lattice gas model. This divergence disappears when there are adsorbed sites with slightly higher energies. An example, H/Si(1 0 0), is discussed in connection with this feature.
Keywords
Models of non-equilibrium phenomena , Silicon , thermal desorption , hydrogen atom , Low index single crystal surfaces
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1678145
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