Growth of 3C–SiC(1 0 0) thin films on Si(1 0 0) by the molecular ion beam deposition

Silicon carbide (SiC) thin films were produced on Si(1 0 0) at low growth temperatures of 750–1000°C, using the molecular ion beam deposition (IBD) technique with a precursor of organosilicon ions. The ions extracted at 25 keV were mass selected, and decelerated to 100 eV. The precursor of methylsilicenium ions (SiCH3+), which has a Si–C bond in the molecular structure, was generated from dimethylsilane (SiH2(CH3)2). The energy distribution of SiCH3+ ions was measured by a PPM421 plasma process monitor. It was confirmed that the energy distributions were 100±1 eV. The chemical bondings and surface structures of SiC thin films were analyzed by Raman spectroscopy and reflection high-energy electron diffraction (RHEED). In the Raman spectrum, a peak at 796 cm−1 was assigned to transverse optic phonon scattering in 3C–SiC. As a result of the analysis of RHEED patterns, 3C–SiC(1 0 0) were formed on Si(1 0 0) substrates. Using the molecular IBD technique with the precursor of methylsilicenium ions, the formation of SiC thin films is available on Si(1 0 0) at low temperature (750°C).