A theoretic study of the indene adsorption on SiO2 surfaces

We studied the indene adsorption on silica surfaces with or without SiCl4. The analysis was realized by means of a semiempirical molecular orbital method. The results show a high degree of selectivity towards the different points of anchoring on the surface. These depend on the silica plane without treatment, species found on SiO2/SiCl4 and the different ways in which the indene molecule approaches the surface. The more stable adsorptions were found over the silica without SiCl4 treatment.