Optimal computer simulation of single electron device response

Recently the control of single electrons by Coulomb blockade could be achieved up to high temperatures with small multidot arrays. The size of the dots must lie in the nanometer range; up to now, it is not possible to realize regular lattice of metallic dots on insulators with these dimensions, and the arrays are necessarily highly disordered, with a very large range of tunnel junction resistances. Monte Carlo or rate equation techniques lead to cumbersome calculations for more than two dots. We will show how we are able to reduce drastically the computation time by optimal procedures. This allows us to increase the size of the arrays we can handle. Our target has been to identify the critical parameters which determine the dispersion of the disordered array response, a crucial parameter for device application. First results will be shown.