Author/Authors :
Ziegler، نويسنده , , J.C. and Scherb، نويسنده , , Nathan G. and Bunk، نويسنده , , O. and Kazimirov، نويسنده , , A. and Cao، نويسنده , , L.X. and Kolb، نويسنده , , D.M. and Johnson، نويسنده , , R.L. and Zegenhagen، نويسنده , , J.، نويسنده ,
Abstract :
Growth mode and epitaxial properties of electrochemically deposited Pb on hydrogen-terminated n-Si(111) were studied by using in situ X-ray standing waves and surface X-ray diffraction. Pb shows a Volmer–Weber growth mode and the Pb crystallites grow predominantly epitaxially, with the (111) planes parallel to the Si(111) planes and with a preferred in-plane orientation.
Keywords :
Electrochemical methods , epitaxy , Lead , Silicon , Single crystal surfaces , Solid–liquid interfaces , X-Ray scattering , and reflection , Diffraction
