Title of article :
Surface reconstructions of MnAs grown on GaAs(001)
Author/Authors :
Kنstner، نويسنده , , M. and Schippan، نويسنده , , F. and Schützendübe، نويسنده , , P. and Dنweritz، نويسنده , , L. and Ploog، نويسنده , , K.H.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2000
Pages :
9
From page :
144
To page :
152
Abstract :
During epitaxial growth of MnAs on GaAs(001) by molecular-beam epitaxy (MBE) the surface exhibits various reconstructions depending on the growth conditions. These reconstructions have been studied during growth by reflection high-energy electron diffraction (RHEED) and reflectance difference spectroscopy (RDS). A feature sensitive to the surface structure was identified in the RD spectra. After growth, the (1×2) and (1×1) reconstructions were cooled down to room temperature and imaged in ultrahigh vacuum with a conventional scanning tunneling microscope (STM). Atomic-scale images of these surfaces are presented.
Keywords :
Gallium arsenide , Surface relaxation and reconstruction , Reflection spectroscopy , epitaxy , Metal–semiconductor magnetic heterostructures , Scanning tunneling microscopy , Manganese arsenide , Magnetic films
Journal title :
Surface Science
Serial Year :
2000
Journal title :
Surface Science
Record number :
1679154
Link To Document :
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