Integrated multiscale process simulation

We summarize two approaches to integrated multiscale process simulation (IMPS), particularly relevant to integrated circuit (IC) fabrication, in which models for equipment (m) and feature (μm) scales are solved simultaneously. The first approach uses regular grids, and is applied to low-pressure chemical vapor deposition (LPCVD) of silicon dioxide from tetraethoxysilane (TEOS). The second approach uses unstructured meshes, and is applied to electrochemical deposition (ECD) of copper. The goal is to develop approaches to estimate “loading” in these processes; i.e., the effects of pattern density and topography on local deposition rates. This is accomplished by resolving pattern (mesoscopic, mm) scales, which are between equipment (0.1–1 m) and feature scales (0.1–1 μm). In this work, we focus on steady-state simulation results. We close with a few thoughts on extending IMPS to the grain scale, and the conversion of discrete atomistic representations to continuum representations of islands during deposition.