Title of article :
Two-dimensional hydrogen chemical-state analysis by a scanning electron-stimulated desorption ion microscope
Author/Authors :
Ueda، نويسنده , , Kazuyuki and Ogai، نويسنده , , Keiko، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2000
Abstract :
Mass and kinetic-energy differences of desorbed ions are separated simultaneously for the first time in a time-of-flight (TOF) spectrum for electron-stimulated desorption (ESD) spectroscopy. Taking into account the difference in the kinetic energy for the same ion species, the TOF-ESD measures different chemical-bonding states from adsorbed hydrogen. Thus the hydrogen chemical state has been analyzed using scanning ESD ion microscopy (SESDIM) on modified line-and-space composites of silicon and SiO2. In this report, two kinds of two-dimensional hydrogen map, corresponding to silicon lines and SiO2 lines, are obtained at a spatial resolution of less than 1 μm.
Keywords :
Diffraction , Electron-stimulated desorption (ESD) , hydrogen atom , scattering , Silicon , Desorption induced by electronic transitions (DIET) , Electron–solid interactions
Journal title :
Surface Science
Journal title :
Surface Science