Hot hole transport through Au/n-Si(100) studied by reverse ballistic electron emission microscopy and spectroscopy

The Au/n-Si(100) contact has been studied using reverse ballistic electron emission microscopy and spectroscopy. Two types of localized collector currents have been observed: one, positive corresponding to electron injection into Si, and the other, negative, associated with hole injection into the semiconductor. The comparative trial of BEEM and reverse BEEM images from the same area shows this difference to be linked to the interface structure. Effects of surface roughness on the observed contrasts are also discussed.