Title of article :
Holographic reconstruction of Si(111) atom positions from energy- and angle-resolved photoelectron diffraction
Author/Authors :
Westphal، نويسنده , , C and Dreiner، نويسنده , , S and Schürmann، نويسنده , , M and Zacharias، نويسنده , , H، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2000
Pages :
20
From page :
103
To page :
122
Abstract :
Angle- and energy-resolved photoelectron diffraction patterns of Si(111) were measured for electron kinetic energies between 196 eV to 784 eV. The diffraction patterns were holographically reconstructed in order to obtain real-space atom images of the near-neighbor environment of the emitter. The reconstruction yields real atom positions in a plane parallel to the surface when the spherical electron-wave approximation is used. Also, maxima corresponding to no atom coordinates were found in the reconstruction. Less intense maxima as in the spherical electron-wave approximation were obtained if a complex scattering factor was included in the reconstruction algorithm. The atom images were calculated for different scattering factors used in the reconstruction. These results are compared with the images obtained for a phase-locked summation of the multiple-energy data. This directly demonstrates the sensitivity of the atom images on the phase in a holographic reconstruction from photoelectron diffraction data.
Keywords :
Silicon , Roughness , Semiconducting surfaces , and topography , Synchrotron radiation photoelectron spectroscopy , Angle resolved photoemission , Electron–solid interactions , scattering , Diffraction , Low index single crystal surfaces , Photoelectron diffraction measurement , Photoelectron holography , surface structure , morphology
Journal title :
Surface Science
Serial Year :
2000
Journal title :
Surface Science
Record number :
1679328
Link To Document :
بازگشت