Title of article :
Novel dark-field imaging of GaN {0001} surfaces with low-energy electron microscopy
Author/Authors :
Maxson، نويسنده , , J.B. and Perkins، نويسنده , , N. and Savage، نويسنده , , D.E. and Woll، نويسنده , , A.R. and Zhang، نويسنده , , L. and Kuech، نويسنده , , T.F. and Lagally، نويسنده , , M.G.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2000
Pages :
6
From page :
217
To page :
222
Abstract :
We have observed significant dark-field diffraction contrast from adjacent terraces of the GaN (0001) surface in low-energy electron microscopy, an unexpected result, as the surface is not reconstructed and thus has no superlattice reflections. Calculations show that the contrast originates from a 60° rotation of the hexagonal unit cell across odd-multiple bilayer-high steps. The result is general: the terrace morphology from any {0001} surface of würtzite structures can be simply imaged even if the surface is not reconstructed.
Keywords :
Low energy electron diffraction (LEED) , Low index single crystal surfaces , surface structure , Semiconducting films , morphology , Roughness , and topography , Electron–solid diffraction , Gallium nitride , Low-energy electron microscopy (LEEM)
Journal title :
Surface Science
Serial Year :
2000
Journal title :
Surface Science
Record number :
1679423
Link To Document :
بازگشت