Grazing-angle incidence X-ray diffraction by Si1−α(x)Geα(x) thin layer if the composition coefficient α(x) is varying harmonically along the flat entrance surface

Presented theoretical paper concerns the investigation of a principal possibility of the Grazing-angle incidence hard and soft X-ray diffraction (GIXD) owing to long-period harmonic variations of the composition coefficient of the strained or relaxed crystalline, as well as amorphous SiGe layer grown on a thick silicon perfect-crystal substrate. The evaluation of the coherent part of X-radiation scattered by mentioned SiGe layer is pointed out the possibility of the direct GIXD experimental investigations of the long-period structured intermediate transformation states of SiGe layer, which are emerging due to periodicity of the strain field along the substrate–layer boundary.