Title of article :
Development of vapor phase decomposition-total-reflection X-ray fluorescence spectrometer
Author/Authors :
Yamagami، نويسنده , , Motoyuki and Ikeshita، نويسنده , , Akihiro and Onizuka، نويسنده , , Yoshinobu and Kojima، نويسنده , , Shinjiro and Yamada، نويسنده , , Takashi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
6
From page :
2079
To page :
2084
Abstract :
A total reflection X-ray fluorescence spectrometer integrated with vapor phase decomposition, VPD-TXRF, was newly developed. This instrument was designed to achieve a minimum footprint, to avoid cross contamination during operation, and to protect people and instruments from HF gas. Comparisons between analysis by VPD-TXRF and by atomic absorption spectrometry (AAS) indicated very good agreement in a wide range, from 108 to 1012 atoms/cm2. The lower limits of detection (LLDs) were improved by two orders of magnitude compared with straight TXRF. For 300-mm Si wafers, the LLDs were 5×108 atoms/cm2 and 1×107 atoms/cm2 for Al and Ni, respectively. VPD-TXRF was able to perform ultra-trace analysis at the level of 108 atoms/cm2.
Keywords :
Total-reflection X-ray fluorescence (TXRF) , Metal contamination , Vapor phase decomposition (VPD) , Metrology tool , Silicon wafer
Journal title :
Spectrochimica Acta Part B Atomic Spectroscopy
Serial Year :
2003
Journal title :
Spectrochimica Acta Part B Atomic Spectroscopy
Record number :
1679956
Link To Document :
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