Title of article
The evolution of 3×3, 6×6, √3×√3R30° and 6√3×6√3R30° superstructures on 6H–SiC (0 0 0 1) surfaces studied by reflection high energy electron diffraction
Author/Authors
Xie، نويسنده , , X.N. and Wang، نويسنده , , H.Q. and Wee، نويسنده , , A.T.S. and Loh، نويسنده , , Kian Ping، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
15
From page
57
To page
71
Abstract
The technique of reflection high energy electron diffraction (RHEED) has been applied to study the evolution of various superstructures on 6H–SiC (0 0 0 1) as a function of annealing temperature. Between the evolution of the stable 3×3 and √3×√3R30° phases on a silicon-enriched 6H–SiC (0 0 0 1), a mixed phase 3×3/2×2 reconstruction followed by a well-defined 6×6 reconstruction was observed by RHEED for the first time. The 6×6 reconstruction is distinct from the pseudo-periodic 6×6 structure suggested previously for graphite moire pattern on 6H–SiC (0 0 0 1) [Surf. Sci. 48 (1975) 463; Surf. Sci. 256 (1991) 354].
chanisms for the formation of these superstructures in the sequence of 3×3,6×6,√3×√3R30° and 6√3×6√3R30° between 800°C to 1200°C were discussed. The 6×6 structure is proposed to evolve directly from the 3×3 following the missing of consecutive Si clusters in the twisted silicon adlayer model. Annealing the 6×6 reconstructed surface to 1000°C gives rise to a √3×√3R30° reconstruction. From here, the segregation of carbon domains occurs readily and these form an incommensurate 6√3×6√3R30 epilayer at 1200°C. At the early stages of the annealing, the 6√3×6√3R30 RHEED pattern consists of a series of cluster satellite streaks superimposed on 1×1 SiC. Further annealing results in the appearance of graphite streaks with its basis vectors rotated 30° to SiC. Prolonged annealing of the graphitized surface results in the growth of single crystalline graphite multilayers on the 6H–SiC substrate.
Keywords
Reflection high-energy electron diffraction (RHEED) , Semiconducting surfaces , Surface relaxation and reconstruction , Graphite , silicon carbide , Low energy electron diffraction (LEED) , morphology , Roughness , and topography , Auger electron spectroscopy , surface structure
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1680147
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