Title of article :
RBS studies of the absolute coverage of Cs on the Si(1 1 1)-7×7 surface
Author/Authors :
Sherman، نويسنده , , W.B and Banerjee، نويسنده , , R and DiNardo، نويسنده , , N.J and Graham، نويسنده , , W.R، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Abstract :
The absolute saturation coverage of Cs adsorbed on the Si(1 1 1)-7×7 surface at room temperature has been measured using Rutherford backscattering spectrometry. At saturation, coverage is 0.51±0.02 monolayers (ML) where 1 ML=7.83×1014 atoms/cm2. This value constrains proposed ordered structural models by placing a strict upper limit on the absolute coverage of the first Cs layer adsorbed on Si(1 0 0) at room temperature. Proposed structural models with lower coverages of ordered Cs must include substantial disordered components.
Keywords :
Low index single crystal surfaces , surface structure , morphology , Roughness , Silicon , Metal–semiconductor interfaces , and topography , Ion scattering spectroscopy , alkali metals
Journal title :
Surface Science
Journal title :
Surface Science