Title of article
Two types of sulfur-induced (2×1) reconstructions on InP(0 0 1)
Author/Authors
Preobrajenski، نويسنده , , A.B. and Gebhardt، نويسنده , , R.K. and Uhlig، نويسنده , , I. and Chassé، نويسنده , , T.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
12
From page
1
To page
12
Abstract
A novel method of surface sulfurization based on in situ PbS deposition at elevated substrate temperatures followed by successive annealing has been used for investigation of sulfur-induced surface reconstructions on InP(0 0 1)-(2×4). Two different (2×1) reconstructions have been observed by low-energy electron diffraction at 200–410°C and 420–445°C, respectively, separated from each other by a (1×1) pattern in the range of 410–420°C. A consistent examination of the results provided by electron diffraction and photoemission techniques has allowed us to propose models of atomic arrangement for both observed (2×1) structures.
Keywords
Indium phosphide , Photoelectron spectroscopy , and topography , Roughness , Sulphur , Low energy electron diffraction (LEED) , morphology , surface structure , Semiconducting surfaces
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1680273
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